通过对国产运算放大器的一项失效分析研究,揭示了由于工艺变更引起的叠层MIS电容短路是导致器件失效的主要原因。在低电场条件下,电容表现正常,但在高电场条件下,由于Fowler-Nordheim隧穿效应,热电子碰撞引发的缺陷积累最终导致了电容的短路失效。通过Sentaurus TCAD仿真分析,验证了界面掺杂原子浓度差异对氧化层生长速率的影响,并提出了相应的工艺改进建议,进而提升国产芯片的可靠性。

This work presents a failure analysis study on domestic operational amplifiers, revealing that the main cause of device failure is the short circuit of stacked MIS capacitors induced by process changes. Under low electric fields, the capacitors perform normally, but under high electric fields, Fowler-Nordheim tunneling and defect accumulation caused by hot electron collisions ultimately lead to capacitor short circuits. Using Sentaurus TCAD simulations, we verified the impact of doping atom concentration differences at the interface on the oxide layer growth rate and proposed process improvement recommendations to enhance the reliability of domestic chips.