The results of the development and testing of a short-wave IR (0.9-1.7 m) camera with the first Russian-produced 320 x 256 focal plane array (FPA) are detailed. This FPA was designed based on an InGaAs/InP heterostructure and has a pixel pitch of 30 m and a suppressed temperature dependence of sensitivity. The primary components and parameters of the camera are discussed. Its advantages and possible applications both as a component of multispectral optoelectronic systems and as an independent device are reviewed.

Tunable and narrowband light detection provides a means of selectively detecting optical signals at a specific wavelength, enabling a precise tool for object identification, machine vision, spectroscopy, and so on. Simultaneous tunable and narrowband response in shortwave infrared (SWIR) detectors is critical yet still challenging. This work utilizes dual-Fano resonance enhanced sum-frequency generation in a two-layer structure comprising a silicon metasurface and a two-dimensional (2D) nonlinear GaSe layer to realize tunable and narrowband light detection in the SWIR range. The silicon metasurface affords a high-quality-factor dual-Fano resonance in the SWIR regime, which enhances the near-field optical density of the two resonant wavelengths (pump and signal) when passing through the 2D nonlinear layer, leading to drastically enhanced sum-frequency generation. The sum-frequency light at a visible wavelength that contains the information of the SWIR signal light, can then be detected by a low-noise visible detector. The tunability and selectivity in the response spectrum stem from the geometry-dependent dual-Fano resonance in the silicon metasurface, covering the 1200–1550 nm range. The upconversion detector exhibits a sub-nanometer narrowband detection with a full width at half maximum of down to ∼0.1 nm, owing to the high quality factor of the Fano resonances. This SWIR narrowband detection is one of the best performances reported so far, much narrower than commercial filter products. The peak value of the specific detectivity of 1.5 × 1012 Jones at 1256.3 nm is achieved, comparable to broadband commercial InGaAs detectors. The detector designs in this work open up the opportunity of upconversion sensors for delicate spectroscopic applications.

Cooled, very sensitive detectors are critical for low-light-level measurements in spectroscopy, fluorescence imaging, and photon emission measurements, including semiconductor failure analysis.