Total ionizing dose compact model for FDSOI 1T pixel sensor

WANG Yiming; WANG Yijiao; WU Jiayao; ZOU Tao

doi:10.20193/j.ices2097-4191.2025.0017

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Integrated Circuits and Embedded Systems ›› 2025, Vol. 25 ›› Issue (7) : 22-27. DOI: 10.20193/j.ices2097-4191.2025.0017

Research Paper

Total ionizing dose compact model for FDSOI 1T pixel sensor

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Abstract

This paper proposes a compact model of fully depleted silicon-on-insulator (FDSOI) based on single transistor pixel sensor (1T-PS) which is affected by total ionizing dose (TID) effects. This model takes into account the generation of fixed charges within the buried oxygen (BOX) layer and interface states at the surface below BOX. The corresponding relationship between irradiation dose and threshold voltage degradation of 1T-PS can be obtained through this model. By integrating the model into BSIM-IMG and executing the typical image input layer of an artificial neural network, the impact of the TID effects on the accuracy of 1T-PS arrays performing vector matrix multiplication (VMM) is studied. The test results indicate that after exposure to a total ionizing dose of 600 krad (Si), the recognition accuracy decreases to approximately 85%.

Key words

compact model / TID effects / FDSOI / 1T pixel sensor / in-sensor computing

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WANG Yiming , WANG Yijiao , WU Jiayao , et al. Total ionizing dose compact model for FDSOI 1T pixel sensor[J]. Integrated Circuits and Embedded Systems. 2025, 25(7): 22-27 https://doi.org/10.20193/j.ices2097-4191.2025.0017

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