电场调控增强型背照式单光子雪崩二极管

李聪; 王哲; 杨旭; 田娜; 冯鹏; 窦润江; 于双铭; 刘剑; 吴南健; 李传波; 刘力源

doi:10.20193/j.ices2097-4191.2024.0035

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集成电路与嵌入式系统 ›› 2024, Vol. 24 ›› Issue (10) : 1-8. DOI: 10.20193/j.ices2097-4191.2024.0035

封面文章

电场调控增强型背照式单光子雪崩二极管

李聪 ¹^,^# ,
王哲 ²^,³^,^# ,
杨旭 ²^,³ ,
田娜 ²^,³ ,
冯鹏 ²^,³ ,
窦润江 ²^,³ ,
于双铭 ²^,³ ,
刘剑 ²^,³ ,
吴南健 ²^,³ ,
李传波 ¹ ,
刘力源 ²^,⁴^,^*

作者信息 +

¹ 中央民族大学理学院,北京 100081

² 中国科学院半导体研究所半导体超晶格国家重点实验室,北京 100083

³ 中国科学院大学材料科学与光电技术学院,北京 100049

⁴ 中国科学院大学电子电气与通信工程学院,北京 100049

作者简介:

^#共同第一作者。

李聪(硕士研究生),主要研究方向为单光子雪崩二极管器件设计;

王哲(助理研究员),主要研究方向为SPAD图像传感器设计;

杨旭(助理研究员),主要研究方向为面向单光子成像技术的图像处理器设计;

田娜(博士研究生),主要研究方向为三维TOF图像传感器设计;

冯鹏(副研究员,硕士生导师),主要研究方向为CMOS图像传感器芯片;

窦润江(高级工程师),主要研究方向为人工智能视觉芯片;

于双铭(副研究员,硕士生导师),主要研究方向为低功耗数模混合集成电路和智能视觉处理器;

刘剑(研究员,博士生导师),主要研究方向为CMOS太赫兹探测与成像;

吴南健(研究员,博士生导师),主要研究方向为仿生视觉片上系统芯片和神经网络图像并行处理芯片设计和应用;

李传波(教授,博士生导师),主要研究方向为导体光电子材料与器件,包括光电探测器、传感器及新能源器件等;

刘力源(研究员,博士生导师),主要研究方向为人工智能视觉芯片研究,包括人工视觉感知器件和电路、新型视觉传感器、边缘视觉处理器、传感器/处理器集成技术等。

通信作者:

* E-mail:liuly@semi.ac.cn。

折叠

Field-controlled enhancement backside-illuminated single photon avalanche diode

LI Cong ¹ ,
WANG Zhe ²^,³ ,
YANG Xu ²^,³ ,
TIAN Na ²^,³ ,
FENG Peng ²^,³ ,
DOU Runjiang ²^,³ ,
YU Shuangming ²^,³ ,
LIU Jian ²^,³ ,
WU Nanjian ²^,³ ,
LI Chuanbo ¹ ,
LIU Liyuan ²^,⁴^,^*

Author information +

文章历史 +

摘要

本研究利用搭建的仿真设计平台开发了一款电场调控增强型背照式单光子雪崩二极管(SPAD)器件,通过调控SPAD雪崩区电场,进一步提升了背照式器件的光子探测效率,降低了暗计数率。仿真结果表明,本研究设计的SPAD在水平和垂直电场的协同作用下,有效提高了电子倍增效率,峰值探测效率达到50.1%,在过偏压为3 V时,暗计数率降低至764 Hz。本文对比分析了不同耗尽层厚度和P-Well半径对电场调控增强型背照式SPAD器件性能的影响,并确定了最优结构尺寸。研究结果为基于SPAD的高精度光电探测应用提供了新的技术途径,为SPAD器件在科学研究和工业应用中的进一步发展奠定了基础。

Abstract

This study developed a Field-Controlled Enhancement Backside-Illuminated Single-Photon Avalanche Diode (SPAD) device using a simulation design platform. By adjusting the electric field in the avalanche region of the backside-illuminated SPAD, the photon detection efficiency was further improved, and the dark count rate was reduced. Simulation results indicate that the SPAD design effectively enhances electron multiplication efficiency through the synergistic effect of horizontal and vertical electric fields, achieving a peak detection efficiency of 50.1%. At an excess bias voltage of 3 V, the dark count rate decreased to 764 Hz. The study compares and analyzes the effects of different depletion layer thicknesses and P-Well radius on the performance of the field-controlled enhanced backside SPAD device, determining the optimal structural dimensions. The results provide a new technical approach for high-precision photoelectric detection applications based on SPAD and lay the groundwork for further development and application of SPAD technology in scientific research and industrial applications.

导出引用

李聪, 王哲, 杨旭, 等. 电场调控增强型背照式单光子雪崩二极管[J]. 集成电路与嵌入式系统. 2024, 24(10): 1-8 https://doi.org/10.20193/j.ices2097-4191.2024.0035

LI Cong, WANG Zhe, YANG Xu, et al. Field-controlled enhancement backside-illuminated single photon avalanche diode[J]. Integrated Circuits and Embedded Systems. 2024, 24(10): 1-8 https://doi.org/10.20193/j.ices2097-4191.2024.0035

中图分类号： TN364

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