本文基于0.15um-GaAs pHEMT设计并实现了一种面向大功率超宽带应用的集成温度与功率检测的分布式砷化镓功率放大器(DPA)。该放大器由分布式功率放大器（DPA）、温度检测单元、差分功率检测单元组成。分布式功率放大器采用了Cascode结构，大幅提高了输出功率。所提出的温度检测单元为多点阵列测温机制，可通过外置编码器选择不同的测温节点，差分功率检测单元由Vdet和Vref引脚测得，可有效抑制温度变化对功率检测精度的影响。DPA测试结果表明，在Vgs= -0.5V工作状态下可实现DC~28Ghz的工作带宽，输出功率（Pdc）提升至 30dBm，功率附加效率（PAE）达到15%，增益平坦度优于±1 dB。小信号测试结果表明，在工作带宽下，输入回波损耗（S11）、输出回波损耗（S22）均优于−10 dB。该芯片的整体版图面积为3.8 mm × 1.5 mm。

This work presents the design and implementation of a distributed gallium arsenide power amplifier (DPA) with integrated temperature and power sensing for high-power ultra-wideband applications, based on a 0.15-μm GaAs pHEMT process. The proposed amplifier consists of a distributed power amplifier (DPA), a temperature sensing unit, and a differential power detection unit. The distributed power amplifier adopts a cascode architecture, which significantly enhances the output power. The proposed temperature sensing unit employs a multi-point array-based temperature measurement scheme, in which different temperature sensing nodes can be selected through an external encoder. The differential power detection unit outputs detection voltages through the Vdet and Vref pins, effectively suppressing the influence of temperature variations on power detection accuracy. Measurement results indicate that, under the operating condition of Vgs = −0.5 V, the DPA achieves an operating bandwidth from DC to 28 GHz, with the output power (Pdc) increased to 30 dBm, a power-added efficiency (PAE) of 15%, and a gain flatness better than ±1 dB. Small-signal measurement results demonstrate that, over the operating bandwidth, both the input return loss (S11) and output return loss (S22) are better than −10 dB. The overall chip layout area is 3.8 mm × 1.5 mm.