针对高性能频率综合系统对压控振荡器宽调谐范围与低相位噪声兼顾的需求，本文基于22 nm CMOS先进工艺设计了一种宽带低相噪压控振荡器。该设计采用互补交叉耦合结构，并在源极引入变压器耦合构成共模降噪网络，在二次谐波处形成高阻抗，以抑制闪烁噪声上变频并改善振荡波形对称性，且3-bit可编程源极电容自适应优化相位噪声。同时，采用10-bit开关电容粗调与可变电容细调相结合的混合调谐方式，在宽调谐范围与较低KVCO之间实现了较好的折中优化。在1.2 V电源电压下，所提出的压控振荡器功耗为3.35 mW，总面积为0.185 mm2，实现了6.07~8.50 GHz连续宽频调谐，在1MHz频偏处相位噪声-122.1~-120.6 dBc/Hz。

This paper presents a wideband low-phase-noise voltage-controlled oscillator (VCO) implemented in a 22 nm CMOS advanced process for high-performance frequency synthesis systems requiring both wide tuning range and low phase noise. The proposed VCO adopts a complementary cross-coupled topology and incorporates a transformer-coupled common-mode noise-suppression network at the sources, which establishes a high impedance at the second harmonic to suppress flicker-noise upconversion and improve oscillation waveform symmetry. In addition, a 3-bit programmable source capacitance is introduced for adaptive phase-noise optimization. To alleviate the inherent tradeoff between wide frequency coverage and low VCO gain, a hybrid tuning scheme combining 10-bit switched-capacitor coarse tuning with varactor-based fine tuning is employed. Operating from a 1.2 Vsupply, the proposed VCO consumes 3.35 mW and occupies an area of 0.185 mm². It achieves a continuous tuning range of 6.07–8.50 GHz and exhibits a phase noise of −122.1 to −120.6 dBc/Hz at a 1-MHz offset frequency.