NLDMOS器件单粒子效应及Nbuffer加固

杨强; 葛超洋; 李燕妃; 谢儒彬; 洪根深

doi:10.20193/j.ices2097-4191.2024.03.003

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集成电路与嵌入式系统 ›› 2024, Vol. 24 ›› Issue (3) : 13-18. DOI: 10.20193/j.ices2097-4191.2024.03.003

航天集成电路研究专栏

NLDMOS器件单粒子效应及Nbuffer加固

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Single-event effect and Nbuffer hardening for NLDMOS device

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摘要

提出了一种漂移区具有Nbuffer结构的N型横向扩散金属氧化物半导体(NLDMOS)结构,以提高器件抗单粒子烧毁(single-event burnout,SEB)能力。通过TCAD仿真验证了该结构的电学和抗单粒子特征。在不改变器件性能的前提下,18 V NLDMOS SEB触发电压由22 V提高到32 V,达到理论最大值,即器件雪崩击穿电压。具有Nbuffer结构的NLDMOS器件可以抑制单粒子入射使得器件寄生三极管开启时的峰值电场转移,避免器件雪崩击穿而导致SEB。此外,对于18~60 V NLDMOS器件的SEB加固,Nbuffer结构依然适用。

Abstract

A single-event burnout (SEB) hardened design based on N-type lateral double-diffused metal-oxide-silicon (NLDMOS) devices with a Nbuffer layer is proposed in this paper.The electrical and single-event characteristics of NLDMOS is verified by TCAD simulation.Without changing the device performance,the 18 V NLDMOS SEB trigger voltage increases from 22 V to 32 V,reaching the theoretical maximum,which is the avalanche breakdown voltage of the device.The NLDMOS device with an Nbuffer structure can suppress the peak electric field transfer when the parasitic bipolar transistor is turned on due to single paricle incident,and avoid avalanche breakdown of the device causing SEB.Furthermore,Nbuffer is also suitable for SEB hardening of 18~60 V NLDMOS.

导出引用

杨强, 葛超洋, 李燕妃, 等. NLDMOS器件单粒子效应及Nbuffer加固[J]. 集成电路与嵌入式系统. 2024, 24(3): 13-18 https://doi.org/10.20193/j.ices2097-4191.2024.03.003

YANG Qiang, GE Chaoyang, LI Yanfei, et al. Single-event effect and Nbuffer hardening for NLDMOS device[J]. Integrated Circuits and Embedded Systems. 2024, 24(3): 13-18 https://doi.org/10.20193/j.ices2097-4191.2024.03.003

中图分类号： TN306 (可靠性及例行试验)

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