功率MOSFET抗单粒子加固技术研究

陈宝忠; 宋坤; 王英民; 刘存生; 王小荷; 赵辉; 辛维平; 杨丽侠; 邢鸿雁; 王晨杰

doi:10.20193/j.ices2097-4191.2024.03.004

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集成电路与嵌入式系统 ›› 2024, Vol. 24 ›› Issue (3) : 19-22. DOI: 10.20193/j.ices2097-4191.2024.03.004

航天集成电路研究专栏

功率MOSFET抗单粒子加固技术研究

陈宝忠 ¹^,² ,
宋坤 ¹^,²^,^* ,
王英民 ¹^,² ,
刘存生 ¹^,² ,
王小荷 ¹^,² ,
赵辉 ¹^,² ,
辛维平 ¹^,² ,
杨丽侠 ¹^,² ,
邢鸿雁 ¹^,² ,
王晨杰 ¹^,²

作者信息 +

Investigation on radiation-hardened technology of single event effect for power MOSFETs

CHEN Baozhong ¹^,² ,
SONG Kun ¹^,²^,^* ,
WANG Yingmin ¹^,² ,
LIU Cunsheng ¹^,² ,
WANG Xiaohe ¹^,² ,
ZHAO Hui ¹^,² ,
XIN Weiping ¹^,² ,
YANG Lixia ¹^,² ,
XING Hongyan ¹^,² ,
WANG Chenjie ¹^,²

Author information +

文章历史 +

摘要

针对功率MOSFET的单粒子效应(SEE)开展了工艺加固技术研究,在单粒子烧毁(SEB)加固方面采用优化的体区掺杂工艺,有效降低了寄生双极晶体管(BJT)增益,抑制了单粒子辐照下的电流正反馈机制。在单粒子栅穿(SEGR)加固方面,通过形成缓变掺杂的外延缓冲层来降低纵向电场梯度,减弱了非平衡载流子在栅敏感区的累积,并开发了台阶栅介质结构提升栅敏感区的临界场强。实验结果表明,经过加固的功率MOSFET在满额漏源工作电压和15 V栅源负偏电压的偏置条件下,单粒子烧毁和栅穿LET值大于75 MeV·cm²/mg。在相同辐照条件下,加固器件的栅源负偏电压达到15~17 V,较加固前的7~10 V有显著提升。

Abstract

An investigation on radiation-hardened technology of single event effect(SEE)for power MOSFETs is described in the paper.In order to decrease the gain of the parasitic bipolar junction transistor (BJT),an optimized reversed-body implant process is utilized.Meanwhile,a variable-doping buffer of epitaxy is designed to reduce the gradient of vertical electric-field,leading to a decreased accumulation of carriers nearly the sensitive gate area.Results show under rated Vds and 15 V negative Vgs bias,the single event burnout (SEB) and single event gate rupture (SEGR) LET of radiation-hardened MOSFETs is above 75 MeV·cm²/mg.Under the same radiation condition,the negative gate-source bias of radiation-hardened MOSFETs reaches to 15~17 V.There is an obvious increase comparing to the unhardened MOSFETs of 7~10 V.

导出引用

陈宝忠, 宋坤, 王英民, 等. 功率MOSFET抗单粒子加固技术研究[J]. 集成电路与嵌入式系统. 2024, 24(3): 19-22 https://doi.org/10.20193/j.ices2097-4191.2024.03.004

CHEN Baozhong, SONG Kun, WANG Yingmin, et al. Investigation on radiation-hardened technology of single event effect for power MOSFETs[J]. Integrated Circuits and Embedded Systems. 2024, 24(3): 19-22 https://doi.org/10.20193/j.ices2097-4191.2024.03.004

中图分类号： TN386.1 TN306 (可靠性及例行试验) TN323.4

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