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PDF(8647 KB)
PDF(8647 KB)
硅基光电探测器空间辐射效应研究进展
Advance in space radiation effects of silicon photodetectors
硅基光电子技术结合了高集成度的大规模集成电路制造技术与光电子芯片的大带宽、高速率等优势,推动硅基光电器件在高能物理实验、医学影像和高能粒子碰撞器等领域的广泛应用。然而,应用于空间环境和医疗探测器的光电探测器在运行周期中预计会受到~1012 particles/cm2的累积注量,而应用于大型粒子对撞机的新型探测器则要经受~1014 particles/cm2的辐射注量。本文详细阐述了硅基光电探测器的空间辐射效应研究现状,主要包括不同粒子辐照后硅基光电二极管、雪崩光电二极管、单光子探测器以及光电倍增管等主流光电探测器的辐射效应研究进展。研究结果表明,探测器抗电离总剂量性能较好,位移损伤是导致其关键性能参数退化的主要原因,由于工作原理差异,各类器件在辐射环境中表现出不同退化行为和作用机理。
Silicon-based optoelectronic technology combines the advantages of high integration of large-scale IC manufacturing technology with the advantages of large bandwidth,high speed ability of optoelectronic chips,and promotes the wide application of silicon-based optoelectronic devices in high energy physics experiments,medical imaging and high energy particle colliders.However,photodetectors used in space environment and medical detectors are expected to be subjected to a cumulative fluences of ~1012 particles/cm2 during their operating cycle,while detectors used in large particle colliders are expected to a radiation fluences of ~1014 particles/cm2.In this paper,the advance in space radiation effects of Si-based photodetectors is described in detail,including the radiation effects of Si-based photodiodes,avalanche photodiodes,single photon detectors and photomultiplier after irradiation by different particles.The research results show that the hardness of total ionizing dose for the detector is good,and the displacement damage is the main reason for the degradation of detectors’ key parameters.Due to the difference in working principle,all kinds of devices show different degradation behavior and degradation mechanism in the space radiation.
硅基光电探测器 / 空间辐射 / 电离总剂量效应 / 位移效应 / 单粒子效应
silicon photodetectors / space radiation / total ionizing dose effect / displacement damage effect / single event effects
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周悦, 胡志远, 毕大炜, 等. 硅基光电子器件的辐射效应研究进展[J]. 物理学报, 2019, 68(20):204-206.
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M Yu Barnyakov,
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