电磁脉冲应力下MOSFET器件退化机制研究

宋斌斌; 王凯; 鹿祥宾; 单书珊; 罗宗兰; 栗磊; 赫嘉楠

doi:10.20193/j.ices2097-4191.2024.05.007

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集成电路与嵌入式系统 ›› 2024, Vol. 24 ›› Issue (5) : 55-59. DOI: 10.20193/j.ices2097-4191.2024.05.007

研究论文

电磁脉冲应力下MOSFET器件退化机制研究

宋斌斌 ¹^,^* ,
王凯 ¹ ,
鹿祥宾 ¹ ,
单书珊 ¹ ,
罗宗兰 ¹ ,
栗磊 ² ,
赫嘉楠 ²

作者信息 +

Study on degradation mechanism of MOSFET devices under electromagnetic pulse stress

SONG Binbin ¹^,^* ,
WANG Kai ¹ ,
LU Xiangbin ¹ ,
SHAN Shushan ¹ ,
LUO Zonglan ¹ ,
LI Lei ² ,
HE Jianan ²

Author information +

文章历史 +

摘要

针对电力应用场景中电磁脉冲导致芯片性能异常退化、芯片内MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)等器件失效机理不清晰等问题,本研究采用幅值和宽度分别为8 V和100 ns的TLP(Transmission Line Pulse)脉冲施加至5 V NMOS器件栅氧层,测量了不同脉冲循环次数下器件输出特性曲线I_d-V_d和转移特性曲线I_d-V_g,通过分析不同TLP脉冲条件下跨导的变化规律研究了阈值电压和载流子迁移率随TLP脉冲个数的退化规律。研究结果表明,相同漏电压V_d和栅极电压V_g下,器件漏电流I_d随TLP脉冲次数的增加而升高;TLP脉冲导致阈值电压V_T降低显著,施加20 000次TLP脉冲后V_T降低约25.66%;TLP脉冲造成器件阈值电压的变化量呈指数升高,通过拟合指数为0.11~0.15;TLP脉冲对沟道内载流子迁移率的影响不明显。

Abstract

In response to issues such as abnormal degradation of chip performance caused by electromagnetic pulses in power application scenarios,and unclear failure mechanisms of devices such as MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistors) within the chip,TLP (Transmission Line Pulse) pulses,with amplitude and width of 8 V and 100 ns,are applied into gate oxide layer of 5 V NMOS devices.The output characteristic curves I_d-V_d and the transfer characteristic curves I_d-V_g under different pulse cycles are measured.By calculating the device transconductance under different TLP number,the threshold voltage V_T and carrier mobility with TLP pulse are obtained.The test results show that under the same drain voltage V_d and gate voltage V_g, the drain current I_d of the device increases with the increase of the number of TLP pulses.TLP pulses cause a significant decrease of V_T,which decreases by about 25.66% under 20 000 TLP pulses,TLP pulses caused the V_T of the device to increase exponentially,and the fitting index is between 0.11~0.15.The influence of TLP pulses on the carrier mobility in the channel is not obvious.

导出引用

宋斌斌, 王凯, 鹿祥宾, 等. 电磁脉冲应力下MOSFET器件退化机制研究[J]. 集成电路与嵌入式系统. 2024, 24(5): 55-59 https://doi.org/10.20193/j.ices2097-4191.2024.05.007

SONG Binbin, WANG Kai, LU Xiangbin, et al. Study on degradation mechanism of MOSFET devices under electromagnetic pulse stress[J]. Integrated Circuits and Embedded Systems. 2024, 24(5): 55-59 https://doi.org/10.20193/j.ices2097-4191.2024.05.007

中图分类号： TN386

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