偏置电压和温度对22 nm FDSOI器件单粒子瞬态的影响研究

黄潇枫; 李臣明; 王海滨; 孙永姝; 王亮; 郭刚; 汪学明

doi:10.20193/j.ices2097-4191.2024.07.005

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集成电路与嵌入式系统 ›› 2024, Vol. 24 ›› Issue (7) : 30-36. DOI: 10.20193/j.ices2097-4191.2024.07.005

集成电路可靠性研究专栏

偏置电压和温度对22 nm FDSOI器件单粒子瞬态的影响研究

黄潇枫 ¹ ,
李臣明 ¹ ,
王海滨 ²^,^* ,
孙永姝 ³ ,
王亮 ³ ,
郭刚 ⁴ ,
汪学明 ⁵

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Bias voltage and temperature dependence of single-event transient in 22 nm FDSOI devices

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摘要

针对22 nm FDSOI工艺在辐射环境下的单粒子瞬态问题,基于Sentaurus TCAD仿真工具对22 nm FDSOI NMOS进行建模,仿真研究了22 nm FDSOI NMOS的单粒子瞬态敏感区域,以及不同偏置电压和工作温度对单粒子瞬态的影响机理。仿真结果表明,22 nm FDSOI NMOS的敏感区域为体区和靠近体区的LDD区域;随着偏置电压的升高,漏端总收集电荷逐渐增大,漏端瞬态脉冲电流的脉冲宽度逐渐减小;相较于偏置电压对单粒子瞬态的影响,工作温度对22 nm FDSOI NMOS单粒子瞬态的影响并不明显。

Abstract

In order to investigate single-event transient (SET) of 22 nm FDSOI technology, we have built a FDSOI NMOS model based on Sentaurus TCAD and carried out various SET simulations in 22nm FDSOI NMOS. The sensitive region, bias voltage and temperature dependence of SET in 22 nm FDSOI NMOS have been examined. The simulation results show that the sensitive regions in 22 nm FDSOI NMOS are the body region and LDD region near the body region. As the bias voltage increases, the total collected charge is increasing, and the width of drain transient pulse current is declining. Compared to the bias voltage, the effect of operating temperature on SET in 22 nm FDSOI NMOS is not significant.

导出引用

黄潇枫, 李臣明, 王海滨, 等. 偏置电压和温度对22 nm FDSOI器件单粒子瞬态的影响研究[J]. 集成电路与嵌入式系统. 2024, 24(7): 30-36 https://doi.org/10.20193/j.ices2097-4191.2024.07.005

HUANG Xiaofeng, LI Chenming, WANG Haibin, et al. Bias voltage and temperature dependence of single-event transient in 22 nm FDSOI devices[J]. Integrated Circuits and Embedded Systems. 2024, 24(7): 30-36 https://doi.org/10.20193/j.ices2097-4191.2024.07.005

中图分类号： TN432 (场效应型)

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