应用于睡眠定时器的纳瓦级功耗超低电压张弛振荡器

李振; 王霖伟; 杨建行; 朱建华; 杨伟涛; 周荣; 刘术彬

doi:10.20193/j.ices2097-4191.2024.07.011

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集成电路与嵌入式系统 ›› 2024, Vol. 24 ›› Issue (7) : 65-72. DOI: 10.20193/j.ices2097-4191.2024.07.011

研究论文

应用于睡眠定时器的纳瓦级功耗超低电压张弛振荡器

作者信息 +

Nanowatt voltage relaxation oscillator applied to sleep timers

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摘要

在物联网(IoT)系统中,为了节省功耗引入了电阻电容(RC)张弛振荡器。针对无补偿的传统RC振荡器频率容易受到电源和温度影响的问题,本文所采用的前向体偏置(Forward Body Biasing,FBB)技术降低了低电源电压数字缓冲器的温度漂移,进一步的,本文同时利用亚阈区金属-氧化物半导体场效应晶体管(MOSFET,简称MOS)泄漏电流补偿技术(Subthreshold Leakage Current,SLC)和泄漏电流抑制技术(Subthreshold Leakage Suppression,SLS)。相比于传统结构振荡器,温度稳定性提升了约38倍。本文基于65 nm CMOS工艺设计了一款RC张弛振荡器,在室温0.4 V的电源电压下,功耗为8.1 nW,工作频率为4.4 kHz,能量效率为1.84 nW/kHz。在-30~90 ℃的范围内,振荡器的温度稳定性为75.1 ppm/℃。

Abstract

In Internet of Things (IoT) systems,Resistance-Capacitance (RC) relaxation oscillator has been implemented to reduce power consumption.To address the issue that uncompensated traditional RC oscillators are susceptible to power supply and temperature influences,the Forward Body Biasing (FBB) technique is employed to reduce the temperature drift of the low supply voltage digital buffer.Additionally,leverage Subthreshold Leakage Current (SLC) compensation and Subthreshold Leakage Suppression (SLS) in high-temperature subthreshold MOS transistors are used.Compared to uncompensated oscillators,the temperature stability is enhanced by 38 times.A relaxation oscillator based on 65 nm CMOS is designed.With a power supply voltage of 0.4 V at room temperature,the power consumption is 8.1 nW,operating at a frequency of 4.4 kHz.The energy efficiency is calculated at 1.84 nW/kHz.Within the range of -30℃ to 90℃,the temperature stability of the oscillator is measured at 75.1 ppm/℃.

导出引用

李振, 王霖伟, 杨建行, 等. 应用于睡眠定时器的纳瓦级功耗超低电压张弛振荡器[J]. 集成电路与嵌入式系统. 2024, 24(7): 65-72 https://doi.org/10.20193/j.ices2097-4191.2024.07.011

LI Zhen, WANG Linwei, YANG Jianhang, et al. Nanowatt voltage relaxation oscillator applied to sleep timers[J]. Integrated Circuits and Embedded Systems. 2024, 24(7): 65-72 https://doi.org/10.20193/j.ices2097-4191.2024.07.011

中图分类号： TN43 (半导体集成电路(固体电路))

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