IGBT模块磁场辐射分布特性仿真与实验研究

杨凯毅; 杜正威; 吴瑞

doi:10.20193/j.ices2097-4191.2025.0096

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集成电路与嵌入式系统 ›› 2026, Vol. 26 ›› Issue (3) : 1-6. DOI: 10.20193/j.ices2097-4191.2025.0096

第九届全国大学生集成电路创新创业大赛优秀作品专刊

IGBT模块磁场辐射分布特性仿真与实验研究

杨凯毅 ¹^,^* ,
杜正威 ¹ ,
吴瑞 ²

作者信息 +

Simulation and experimental study on near-field magnetic radiation characteristics of IGBT modules

YANG Kaiyi ¹^,^* ,
DU Zhengwei ¹ ,
WU Rui ²

Author information +

文章历史 +

摘要

针对绝缘栅双极型晶体管(IGBT)功率模块在高速开关过程中产生的近场磁辐射干扰问题,采用仿真与实验相结合的方法对模块内部的空间磁场分布规律进行了系统性研究。首先,基于磁矢量势(MVP)理论,利用自主开发的有限元求解器对GCV900系列IGBT模块进行三维电磁场建模与仿真,分析了不同频率下模块内部的磁场分布特性。随后,搭建了三相无功测试平台,通过高精度近场磁探头对模块上不同位置的IGBT芯片表面的磁场进行了实验测量。仿真与实验结果均表明,近场磁辐射强度在模块内部呈不均匀分布,靠近直流输入端、处于主换流路径核心位置的IGBT芯片区域承受的磁场辐射最强,而靠近交流输出端的芯片区域所受影响最小。研究揭示了IGBT模块内部磁场辐射的分布规律,为功率模块的电磁兼容优化设计及近场耦合干扰抑制提供了理论依据和数据支持。

Abstract

During high-speed switching, Insulated Gate Bipolar Transistor (IGBT) power modules produce near-field magnetic radiation, creating significant interference issues. To understand this phenomenon, this paper investigates the spatial distribution of the magnetic field inside the module through a combination of simulation and experiment. The investigation begins with a simulation based on Magnetic Vector Potential (MVP) theory. Using a self-developed finite element solver, a 3D electromagnetic model of a GCV900 series IGBT is simulated to analyze its internal magnetic field characteristics at different frequencies. Following the simulation, experimental validation is performed. A three-phase reactive power test platform was built, allowing for measurements of the magnetic field on the IGBT chip surfaces with a high-precision near-field probe. Both approaches yielded consistent results. They confirm that the magnetic radiation intensity is non-uniformly distributed within the module. Specifically, the area near the DC input, located at the core of the main commutation path, experiences the strongest radiation. In contrast, the area near the AC output is minimally impacted. Ultimately, this research clarifies the magnetic radiation pattern inside IGBT modules, offering a solid theoretical foundation and valuable data for improving EMC design and mitigating near-field coupling interference.

导出引用

杨凯毅, 杜正威, 吴瑞. IGBT模块磁场辐射分布特性仿真与实验研究[J]. 集成电路与嵌入式系统. 2026, 26(3): 1-6 https://doi.org/10.20193/j.ices2097-4191.2025.0096

YANG Kaiyi, DU Zhengwei, WU Rui. Simulation and experimental study on near-field magnetic radiation characteristics of IGBT modules[J]. Integrated Circuits and Embedded Systems. 2026, 26(3): 1-6 https://doi.org/10.20193/j.ices2097-4191.2025.0096

中图分类号： TP872 (远距离控制和信号、远距离控制和信号系统)

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