55 nm芯片栅氧化层TDDB寿命预测与模型适用性研究
单书珊, 鹿祥宾, 秦豪斌, 方利泉, 郑飞君
TDDB lifetime prediction and model applicability for gate oxide in 55 nm technology
Shan Shushan, Lu Xiangbin, Qin Haobin, Fang Liquan, Zheng Feijun
集成电路与嵌入式系统
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2026, (11): 83
-90
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DOI: 10.20193/j.ices2097-4191.2026.0086
