全球首颗8 Mb SOT-MRAM:从器件突破到晶圆级制造
曹凯华, 张和, 刘宏喜, 王戈飞, 王昭昊, 赵巍胜
The world's first 8 Mb SOT-MRAM: from device breakthrough to wafer-level fabrication
CAO Kaihua, ZHANG He, LIU Hongxi, WANG Gefei, WANG Zhaohao, ZHAO Weisheng
集成电路与嵌入式系统
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2026, (1): 1
-4
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DOI: 10.20193/j.ices2097-4191.2025.0120
