Investigation on radiation-hardened technology of single event effect for power MOSFETs

CHEN Baozhong, SONG Kun, WANG Yingmin, LIU Cunsheng, WANG Xiaohe, ZHAO Hui, XIN Weiping, YANG Lixia, XING Hongyan, WANG Chenjie

Integrated Circuits and Embedded Systems ›› 2024, Vol. 24 ›› Issue (3) : 19-22.

PDF(2177 KB)
PDF(2177 KB)
Integrated Circuits and Embedded Systems ›› 2024, Vol. 24 ›› Issue (3) : 19-22.
Special Topic of Aerospace Integrated Circuits

Investigation on radiation-hardened technology of single event effect for power MOSFETs

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 24(3): 19-22

References

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(2177 KB)

Accesses

Citation

Detail

Sections
Recommended

/