Wang, Shichun, Feng, Junjie, Zhang, Baoqin, Han, Yujie, Xu, Chuanzhong, Zeng, Xia, Yu, Fei
Accepted: 2024-08-30
A surface-potential-based I-V model for junctionless gate-all-around transistors is presented in this paper. Based on the one-dimensional Poisson equation, combined with the corresponding boundary conditions, the nonlinear system of transcendental equations based on physical principles in two analytical models is sequentially solved using the Runge-Kutta algorithm, and the numerical models of the surface potential, midpoint potential, and gate pressure are established. Subsequently, Pao-Sah integration is used to derive the drain current of gate-all-around field effect transistors by using the results of the surface potential expressed in form of the intermediate parameter. The proposed physics-based I-V model results exhibit good agreements with numerical and experimental data, validating the feasibility of the modeling approach for gate-all-around field effect transistors. Moreover, this method realizes the combination of analytical and numerical models and achieves a good balance between accuracy and efficiency.