Integrated Circuits and Embedded Systems

Nanowatt wake-up receiver for IoT applications

YANG Jianhang, WANG Linwei, LI Zhen, LAN Hongjian, ZHOU Rong, LIU Shubin

Integrated Circuits and Embedded Systems, 2024, 24(6): 9-17.

参考文献	工艺/nm	中心频率/MHz	灵敏度/dBm	功耗*
[4]	65	915	-90	19 μ W
[5]	65	2 400	-57.5	150 μ W
[7]	65	915	-70.2	2.7 μ W
[8]	130	403	-45	116 nW
本文	65	433	-72	21.9 nW*

Table 1 Performance comparison of wake-up receivers

Other figure/table from this article

Fig. 1 Wireless terminal system structure
Fig. 2 Wake-up receiver system architecture diagram
Fig. 3 RF matching network
Fig. 4 The variation of passive gain A_v with R_ed,in and C_ed,in
Fig. 5 Single stage envelope detection principle diagram
Fig. 6 The proposed passive envelope detection circuit
Fig. 7 Collaborative design process diagram
Fig. 8 Equivalent circuit model considering parasitic effects
Fig. 9 Passive gain of matching network under different temperatures and process angles
Fig. 10 Baseband amplifier and schematic diagram of single-stage baseband amplifier
Fig. 11 Baseband amplifier gain at different temperatures under TT process angle
Fig. 12 Baseband amplifier gain at different process angles at room temperature
Fig. 13 Comparator schematic diagram
Fig. 14 Schematic diagram of correlator
Fig. 15 Wake-up receiver S11 parameters
Fig. 16 Matching network input and output waveforms
Fig. 17 MDR variation with input power
Fig. 18 Transient simulation results
Fig. 19 Power consumption ratio of each module in the receiver
Fig. 20 Chip layout photo