Integrated Circuits and Embedded Systems

Single-event effect and Nbuffer hardening for NLDMOS device

YANG Qiang, GE Chaoyang, LI Yanfei, XIE Rubin, HONG Genshen

Integrated Circuits and Embedded Systems, 2024, 24(3): 13-18.

Fig. 11 The variation curve of BV and V_SEB at different L_b with 40 V/60 V NLDMOS

Other figure/table from this article

Fig. 1 The illustration of 18 V NLDMOS
Fig. 2 Normal characteristics of the conventional 18 V NLDMOS and 18 V NLDMOS hardened with Nbuffer
Fig. 3 Comparison of drain currents of the conventional 18 V NLDMOS with different position of single paricle incident
Fig. 4 Comparison of drain currents of the conventional 18 V NLDMOS at different V_d
Fig. 5 The horizontal surface electric field of the conventional 18 V NLDMOS
Fig. 6 The variation curve of V_t and R_on_,_sp at different L_b
Fig. 7 The variation curve of BV and V_SEB at different L_b
Fig. 8 Comparison of drain currents of 18 V NLDMOS hardened with Nbuffer at different V_d
Fig. 9 The horizontal surface electric field of 18 V NLDMOS
Fig. 10 Electron currents and hole currents of 18 V NLDMOS when V_D=32 V