Integrated Circuits and Embedded Systems

Bias voltage and temperature dependence of single-event transient in 22 nm FDSOI devices

HUANG Xiaofeng, LI Chenming, WANG Haibin, SUN Yongshu, WANG Liang, GUO Gang, WANG Xueming

Integrated Circuits and Embedded Systems, 2024, 24(7): 30-36.

Fig. 7 LET=0.4 pC/μm,maximum drain current and pulse width in different strike location and bias voltage at 298 K

Other figure/table from this article

Fig. 1 Typical cross-section of 22 nm FDSOI NMOS^[9]
Fig. 2 22 nm FDSOI NMOS model
Fig. 3 Diagram of different positions in 22 nm FDSOI NMOS model
Table 1 22 nm FDSOI NMOS model process parameters
Fig. 4 I-V characteristic curves of 22 nm FDSOI NMOS device Id-Vg curves and Id-Vd curves in different bias voltage at 298 K
Fig.5 Distribution of electron-hole pairs density produced by HeavyIon model at different strike positions
Fig. 6 LET=0.4 pC/μm,drain total collected charge and bipolar gain in different strike location and bias voltage at 298 K
Fig. 8 LET=0.4 pC/μm, drain transient pulse current when heavy ion strikes in the center of body region in different bias voltage at 298 K
Fig. 9 Striking at body region,drain total collected charge,maximum drain current and pulse width in different bias voltage and LET at 298 K
Fig. 10 Striking at body region and LET=0.4 pC/μm,drain total collected charge and pulse width in different bias voltage and temperature