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模态框(Modal)标题

 
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Figure/Table detail

Compact modeling of I-V model for gate-all-around field effect transistors
WANG Shichun, FENG Junjie, ZHANG Baoqin, HAN Yujie, XU Chuanzhong, ZENG Xia, YU Fei
Integrated Circuits and Embedded Systems, 2024, 24(10): 9-18.   DOI: 10.20193/j.ices2097-4191.2024.0022

参 数 图4~图7中数据 图8~图9中数据
Na/cm-3 1013 1013
g c 1/(cm-3eV-1) 1018 1018
E1/V 0.161 0.161
Vfb/V -1 -1.1
tox/nm 5 5
R/nm 10 10
L/nm 14 14
μs/(cm2V-1s-1) — 12
μ0/(cm2V-1s-1) — 88
θ1 — -0.09
θ2 — -0.28
θ3 — -0.05
VQ/V — 0.164
Vi/V — 0.585
kn — 0.01
Table 1 Parameters for simulation
Other figure/table from this article
  • Fig. 1 3D structural diagram of GAAFET and GAAFET cross-sectional view[13]
  • Fig. 2 Distribution of various charge densities under different doping concentrations
  • Fig. 3 The relationship curve between different types of charge density and surface potential
  • Fig. 4 Based on region division method
  • Fig. 5 Based on effective charge density method
  • Fig. 6 The relationship between surface potential and gate voltage under different channel voltages
  • Fig. 7 The relationship between surface potential and gate voltage under different doping concentrations
  • Fig. 8 Comparison between model and experimental results based on region division method
  • Fig. 9 Comparison between model and experimental results based on effective charge density method

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