×
模态框(Modal)标题
在这里添加一些文本
Close
Close
Submit
Cancel
Confirm
×
模态框(Modal)标题
×
Home
About Journal
About Journal
Indexed in
Awards
Editorial Board
Guide for Authors
Browse
Current Issue
Just Accepted
Archive
Highlights
Topic
Most Viewed
Most Download
Most Cited
E-mail Alert
RSS
Subscribe
Download
Editorial Policy
Contact Us
Figure/Table detail
Investigation on radiation-hardened technology of single event effect for power MOSFETs
CHEN Baozhong, SONG Kun, WANG Yingmin, LIU Cunsheng, WANG Xiaohe, ZHAO Hui, XIN Weiping, YANG Lixia, XING Hongyan, WANG Chenjie
Integrated Circuits and Embedded Systems
, 2024, 24(
3
): 19-22.
Fig. 1
Sketch of SEB effect
Other figure/table from this article
Fig. 2
Sketch of SEGR effect
Fig. 3
Structure of SEB-hardened device
Fig. 4
Drain-source current of hardened device and non-hardened device
Fig. 5
Parasitic BJT gains of hardened device and non-hardened device
Fig. 6
Structure of SEGR-hardened device
Fig. 7
Electric field of hardened device and non-hardened device
Fig. 8
Transfer curves of hardened device and non-hardened device
Fig. 9
Results of SEE experiment