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Figure/Table detail
Bias voltage and temperature dependence of single-event transient in 22 nm FDSOI devices
HUANG Xiaofeng, LI Chenming, WANG Haibin, SUN Yongshu, WANG Liang, GUO Gang, WANG Xueming
Integrated Circuits and Embedded Systems
, 2024, 24(
7
): 30-36.
Fig. 8
LET=0.4 pC/μm, drain transient pulse current when heavy ion strikes in the center of body region in different bias voltage at 298 K
Other figure/table from this article
Fig. 1
Typical cross-section of 22 nm FDSOI NMOS
[
9
]
Fig. 2
22 nm FDSOI NMOS model
Fig. 3
Diagram of different positions in 22 nm FDSOI NMOS model
Table 1
22 nm FDSOI NMOS model process parameters
Fig. 4
I-V characteristic curves of 22 nm FDSOI NMOS device Id-Vg curves and Id-Vd curves in different bias voltage at 298 K
Fig.5
Distribution of electron-hole pairs density produced by HeavyIon model at different strike positions
Fig. 6
LET=0.4 pC/μm,drain total collected charge and bipolar gain in different strike location and bias voltage at 298 K
Fig. 7
LET=0.4 pC/μm,maximum drain current and pulse width in different strike location and bias voltage at 298 K
Fig. 9
Striking at body region,drain total collected charge,maximum drain current and pulse width in different bias voltage and LET at 298 K
Fig. 10
Striking at body region and LET=0.4 pC/μm,drain total collected charge and pulse width in different bias voltage and temperature