Integrated Circuits and Embedded Systems

Compact modeling of I-V model for gate-all-around field effect transistors

WANG Shichun, FENG Junjie, ZHANG Baoqin, HAN Yujie, XU Chuanzhong, ZENG Xia, YU Fei

Integrated Circuits and Embedded Systems, 2024, 24(10): 9-18. DOI: 10.20193/j.ices2097-4191.2024.0022

Table 1 Parameters for simulation

Other figure/table from this article

Fig. 1 3D structural diagram of GAAFET and GAAFET cross-sectional view^[13]
Fig. 2 Distribution of various charge densities under different doping concentrations
Fig. 3 The relationship curve between different types of charge density and surface potential
Fig. 4 Based on region division method
Fig. 5 Based on effective charge density method
Fig. 6 The relationship between surface potential and gate voltage under different channel voltages
Fig. 7 The relationship between surface potential and gate voltage under different doping concentrations
Fig. 8 Comparison between model and experimental results based on region division method
Fig. 9 Comparison between model and experimental results based on effective charge density method