Study on degradation mechanism of MOSFET devices under electromagnetic pulse stress

SONG Binbin, WANG Kai, LU Xiangbin, SHAN Shushan, LUO Zonglan, LI Lei, HE Jianan

Integrated Circuits and Embedded Systems ›› 2024, Vol. 24 ›› Issue (5) : 55-59.

PDF(3960 KB)
PDF(3960 KB)
Integrated Circuits and Embedded Systems ›› 2024, Vol. 24 ›› Issue (5) : 55-59. DOI: 10.20193/j.ices2097-4191.2024.05.007
Research Paper

Study on degradation mechanism of MOSFET devices under electromagnetic pulse stress

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 24(5): 55-59 https://doi.org/10.20193/j.ices2097-4191.2024.05.007

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(3960 KB)

Accesses

Citation

Detail
Sections
Recommended

/

〈 〉