The world's first 8 Mb SOT-MRAM: from device breakthrough to wafer-level fabrication

CAO Kaihua; ZHANG He; LIU Hongxi; WANG Gefei; WANG Zhaohao; ZHAO Weisheng

doi:10.20193/j.ices2097-4191.2025.0120

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Integrated Circuits and Embedded Systems ›› 2026, Vol. 26 ›› Issue (1) : 1-4. DOI: 10.20193/j.ices2097-4191.2025.0120

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The world's first 8 Mb SOT-MRAM: from device breakthrough to wafer-level fabrication

CAO Kaihua ¹ ,
ZHANG He ¹ ,
LIU Hongxi ² ,
WANG Gefei ² ,
WANG Zhaohao ¹ ,
ZHAO Weisheng ¹^,^*

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CAO Kaihua , ZHANG He , LIU Hongxi , et al . The world's first 8 Mb SOT-MRAM: from device breakthrough to wafer-level fabrication[J]. Integrated Circuits and Embedded Systems. 2026, 26(1): 1-4 https://doi.org/10.20193/j.ices2097-4191.2025.0120

References

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[2]	NATSUI M, TAMAKOSHI A, HONJO H, et al. Dual-Port Field-Free SOT-MRAM Achieving 90 MHz Read and 60 MHz Write Operations under 55 nm CMOS Technology and 1.2 V Supply Voltage[C]// IEEE VLSIC, 2020.DOI:10.1109/VLSICircuits18222.2020.9162774. Cited in this article [1]

[3]	HUANG Y L, SONG M Y, LEE C M, et al. A 64-kilobit spin-orbit torque magnetic random-access memory based on back-end-of-line-compatible β-tungsten[J]. Nature Electronics[2025-12-23].DOI:10.1038/s41928-025-01434-x. Cited in this article [1]

[4]	JIANG C, LU S, ZHANG Z, et al. Demonstration of 128 Kb SOT-MRAM Chip with 5 ns Write and 15 ns Read Speed, High Endurance Over 1010 and Low ECC-on Bit Error Rate[C]// 2024 IEEE International Electron Devices Meeting (IEDM),2024:1-4.DOI:10.1109/iedm50854.2024.10873510. Cited in this article [1]

[5]	WANG Z H, LIU H X, CAO K H, et al. Research on manufacturing process of spin orbit torque magnetic random access memory[J]. SCIENTIA SINICA Physica, Mechanica & Astronomica.DOI:10.1360/SSPMA-2025-0012 (in Chinese). Cited in this article [2]