The practical deployment of quantum computing is bottlenecked by the need to scale and miniaturize quantum systems. Rapid advances in cryogenic integrated circuits (Cryo-ICs) that operate reliably at 4–77 K and even below 1 K have become a key foundation for this scaling and miniaturization. Superconducting qubits inside dilution refrigerators are extremely temperature-sensitive: fluctuations directly impact coherence time, frequency drift, linewidth, and bias stability. Consequently, real-time temperature monitoring at cold-end nodes using cryogenic CMOS temperature sensors is essential for calibrating qubit-control parameters and budgeting the thermal noise of ultra-low-temperature control chips. This paper presents a systematic review of CMOS temperature-sensor technologies spanning room temperature to cryogenic operation. We first overview mainstream room-temperature implementations—including hybrid BJT/MOS PTAT/CTAT schemes, resistor-based sensors leveraging various TCR resistors, and ring-oscillator readout architectures—and compare their uncertainty, energy consumption, area, and calibration cost. We then summarize the cryogenic characteristics of BJT, MOS, and SiGe devices across different processes. Finally, we survey and cross-compare recent cryogenic temperature sensors targeting 4 K and related ultra-low-temperature applications.