Modeling Method of FPGA Radiation Effect Based on IBIS Model

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Integrated Circuits and Embedded Systems ›› 2023, Vol. 23 ›› Issue (7) : 44-48.

NEW PRODUCT & TECH

Modeling Method of FPGA Radiation Effect Based on IBIS Model

Zhang Xiaopeng, Liu Jinhui, Liang Bo, Tan Wendan, Zhang Xindan, Liu Gang

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Abstract

A method for modeling the TID effect of FPGA is proposed based on the Input/Output Buffer Information Specification (IBIS).The structure of the FPGA circuit is divided into three parts:the input buffer,the output buffer and the logic functional area.The buffer model is modeled using VHDL-AMS based on the IBIS model,and the functional area model is developed using VHDL based on specific requirements.The IBIS model and port level data for the FPGA at 0 krad(Si),820 krad(Si) and 2.52 Mrad(Si) are measured for the IBIS model based modeling requirements.Comparison of the simulations with the experimental data shows that the proposed model reflects the effect of a longer level transition time after the FPGA is impacted by the total dose effect,and the error between the simulated and experimental results is within 30%.The proposed modeling method provides model support for evaluating the TID effect of digital components and is valuable for anti-radiation of digital systems.

Key words

FPGA / total inoizing dose / IBIS Model / mixed signal model / level transition time

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Zhang Xiaopeng, Liu Jinhui, Liang Bo, Tan Wendan, Zhang Xindan, Liu Gang. Modeling Method of FPGA Radiation Effect Based on IBIS Model[J]. Integrated Circuits and Embedded Systems. 2023, 23(7): 44-48

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