Advance in space radiation effects of silicon photodetectors

FU Jing; FU Xiaojun; WEI Jianan; ZHANG Peijian; GUO Anran

doi:10.20193/j.ices2097-4191.2024.03.002

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Integrated Circuits and Embedded Systems ›› 2024, Vol. 24 ›› Issue (3) : 6-12. DOI: 10.20193/j.ices2097-4191.2024.03.002

Special Topic of Aerospace Integrated Circuits

Advance in space radiation effects of silicon photodetectors

FU Jing ¹ ,
FU Xiaojun ¹^,^* ,
WEI Jianan ¹ ,
ZHANG Peijian ¹ ,
GUO Anran ²

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Abstract

Silicon-based optoelectronic technology combines the advantages of high integration of large-scale IC manufacturing technology with the advantages of large bandwidth,high speed ability of optoelectronic chips,and promotes the wide application of silicon-based optoelectronic devices in high energy physics experiments,medical imaging and high energy particle colliders.However,photodetectors used in space environment and medical detectors are expected to be subjected to a cumulative fluences of ~10¹² particles/cm² during their operating cycle,while detectors used in large particle colliders are expected to a radiation fluences of ~10¹⁴ particles/cm².In this paper,the advance in space radiation effects of Si-based photodetectors is described in detail,including the radiation effects of Si-based photodiodes,avalanche photodiodes,single photon detectors and photomultiplier after irradiation by different particles.The research results show that the hardness of total ionizing dose for the detector is good,and the displacement damage is the main reason for the degradation of detectors’ key parameters.Due to the difference in working principle,all kinds of devices show different degradation behavior and degradation mechanism in the space radiation.

Key words

silicon photodetectors / space radiation / total ionizing dose effect / displacement damage effect / single event effects

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FU Jing , FU Xiaojun , WEI Jianan , et al . Advance in space radiation effects of silicon photodetectors[J]. Integrated Circuits and Embedded Systems. 2024, 24(3): 6-12 https://doi.org/10.20193/j.ices2097-4191.2024.03.002

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