×
模态框(Modal)标题
在这里添加一些文本
Close
Close
Submit
Cancel
Confirm
×
模态框(Modal)标题
×
Home
About Journal
Editorial Board
Guide for Authors
Browse
Current Issue
Just Accepted
Archive
Highlights
Topic
Most Viewed
Most Download
Most Cited
Subscribe
Download
Editorial Policy
Publication Ethics Statement
Peer Review Policy
Contact Us
中文
Figure/Table detail
Research on reliability simulation method for industrial-chip-featured LDMOS devices under elctromagntic pulse impact
ZHU Yaxing, ZHAO Dongyan, CHEN Yanning, LIU Fang, WU Bo, WANG Kai, LIANG Yingzong, YU Wen, CHI Boming, LIAN Yajun
Integrated Circuits and Embedded Systems
, 2024, 24(
10
): 25-30. DOI:
10.20193/j.ices2097-4191.2024.0030
Fig. 5
Reliability degradation simulation of the given LDMOS device
Other figure/table from this article
Fig.1
Typical electromagnetic interference signal acquisition and analysis in industrial chip environments
Fig. 2
Time-domain probability density
Fig. 3
Conversion of a complex electromagnetic interference signal to the rectangular pulse signal
Fig. 4
Device simulation with electromagnetic boundary conditions