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Research on reliability characterization method for MOS devices under electromagnetic interference environment
ZHU Yaxing, ZHAO Dongyan, CHEN Yanning, LIU Fang, WU Bo, WANG Kai, YU Wen, WANG Baiqing, SONG Binbin, LIAN Yajun
Integrated Circuits and Embedded Systems, 2024, 24(8): 29-34.   DOI: 10.20193/j.ices2097-4191.2024.0012

Fig. 2 Schematic diagram of Si-H bond breakage at Si/SiO2 interface
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