Integrated Circuits and Embedded Systems

Research on reliability characterization method for MOS devices under electromagnetic interference environment

ZHU Yaxing, ZHAO Dongyan, CHEN Yanning, LIU Fang, WU Bo, WANG Kai, YU Wen, WANG Baiqing, SONG Binbin, LIAN Yajun

Integrated Circuits and Embedded Systems, 2024, 24(8): 29-34. DOI: 10.20193/j.ices2097-4191.2024.0012

Fig. 3 Flow chart for predicting the life of MOS devices under electromagnetic interference environment

Other figure/table from this article

Fig. 1 Experiment data
Fig. 2 Schematic diagram of Si-H bond breakage at Si/SiO₂ interface
Fig. 4 Simulation data of MOS device reliability model based on TCAD technique