Fig. 6  Comparison of positioning errors with different sampling intervals

Table 4  Experimental errors of three algorithms at a sampling interval of 0.5 m (Unit: m)

Fig. 4  Comparison of drain currents of the conventional 18 V NLDMOS at different V_d

Fig. 5  The horizontal surface electric field of the conventional 18 V NLDMOS

Fig. 6  The variation curve of V_t and R_on,sp at different L_b

Fig. 4  Host system interface

Fig. 6  Comparison of posture perception results of different software mAP

Fig. 7  Link initialization and training process under UCIe 1.0 standard

Table 3  Summary of advances of high-speed D2D interface in-package

Fig. 8  SerDes under DAC/ADC-based architecture

Fig. 9  SerDes under analog-mixed architecture

Fig. 1  Network deployment scheme design

Fig. 20  Chip layout photo

Fig. 4  Overall compile and characterize methodology of OpenRAM

Fig. 1  Flow chart of RF fingerprint extraction algorithm based on spread spectrum restoration

Fig. 10  Electron currents and hole currents of 18 V NLDMOS when V_D=32 V

Fig. 11  The variation curve of BV and V_SEB at different L_b with 40 V/60 V NLDMOS

Fig. 1  Sketch of SEB effect

Fig. 2  Sketch of SEGR effect

Fig. 3  Structure of SEB-hardened device