Design of Memory System with Power-off Rewrite Function

Wen Feng, Guo Hongwei, Li Huijing, Yang Zhiwen

Integrated Circuits and Embedded Systems ›› 2023, Vol. 23 ›› Issue (12) : 8-11.

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Integrated Circuits and Embedded Systems ›› 2023, Vol. 23 ›› Issue (12) : 8-11.
TOPICAL DISCUSS

Design of Memory System with Power-off Rewrite Function

  • Wen Feng, Guo Hongwei, Li Huijing, Yang Zhiwen
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Abstract

Aiming at the problem of occasional power loss that may occur in the complex environment of the bomb shipboard memory,a memory solution with power failure rewrite function is proposed to avoid the last stored data being overwritten by the new data after the memory recovers from the occasional power loss on the bomb arrows.The power down-surviving technique is implemented on the basis of write-while-erase,and cross-biplane programming is used to satisfy the data writing rate.The ground test bench simulates the data sent from the bomb system,and after a large number of tests,the results show that the design achieves the function of power failure renewal,and can achieve the stable storage of data,which verifies the reliability of the system.

Key words

NAND Flash / interleaved dual page programming / write while erasing / bad block management / power down-surviving

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Wen Feng, Guo Hongwei, Li Huijing, Yang Zhiwen. Design of Memory System with Power-off Rewrite Function[J]. Integrated Circuits and Embedded Systems. 2023, 23(12): 8-11

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