Aerospace integrated circuits are the core foundation technology of aerospace engineering,and their long-term sustained development is crucial for China's progress towards becoming a space power.This article introduces the development status of international integrated circuits,the development trends of aerospace integrated circuits,the development strategies of United States and Europe regarding aerospace integrated circuits,as well as the current development situation of China's aerospace integrated circuits.It elaborates on several considerations for the development of China's aerospace integrated circuits.

A single-event burnout (SEB) hardened design based on N-type lateral double-diffused metal-oxide-silicon (NLDMOS) devices with a Nbuffer layer is proposed in this paper.The electrical and single-event characteristics of NLDMOS is verified by TCAD simulation.Without changing the device performance,the 18 V NLDMOS SEB trigger voltage increases from 22 V to 32 V,reaching the theoretical maximum,which is the avalanche breakdown voltage of the device.The NLDMOS device with an Nbuffer structure can suppress the peak electric field transfer when the parasitic bipolar transistor is turned on due to single paricle incident,and avoid avalanche breakdown of the device causing SEB.Furthermore,Nbuffer is also suitable for SEB hardening of 18~60 V NLDMOS.

An investigation on radiation-hardened technology of single event effect(SEE)for power MOSFETs is described in the paper.In order to decrease the gain of the parasitic bipolar junction transistor (BJT),an optimized reversed-body implant process is utilized.Meanwhile,a variable-doping buffer of epitaxy is designed to reduce the gradient of vertical electric-field,leading to a decreased accumulation of carriers nearly the sensitive gate area.Results show under rated Vds and 15 V negative Vgs bias,the single event burnout (SEB) and single event gate rupture (SEGR) LET of radiation-hardened MOSFETs is above 75 MeV·cm²/mg.Under the same radiation condition,the negative gate-source bias of radiation-hardened MOSFETs reaches to 15~17 V.There is an obvious increase comparing to the unhardened MOSFETs of 7~10 V.

To evaluate the single event effects vulnerability of electronic systems being used in space environment,and verify the effectiveness of system-level hardening methods against radiation,this article conducts relevant research on system level single event effect testing methods.Feasibility of irradiating devices in electronic systems one by one under laboratory environment to evaluate single event functional interrupt rate is confirmed.It is suggested that many methods could be used to get the vulnerability data of devices.The procedure to directly sum up the cross section value corresponding to each device is pointed out to be not reasonable.Through all the above suggestions,it is able to support the test for system-level single event effects.

Silicon-based optoelectronic technology combines the advantages of high integration of large-scale IC manufacturing technology with the advantages of large bandwidth,high speed ability of optoelectronic chips,and promotes the wide application of silicon-based optoelectronic devices in high energy physics experiments,medical imaging and high energy particle colliders.However,photodetectors used in space environment and medical detectors are expected to be subjected to a cumulative fluences of ~10¹² particles/cm² during their operating cycle,while detectors used in large particle colliders are expected to a radiation fluences of ~10¹⁴ particles/cm².In this paper,the advance in space radiation effects of Si-based photodetectors is described in detail,including the radiation effects of Si-based photodiodes,avalanche photodiodes,single photon detectors and photomultiplier after irradiation by different particles.The research results show that the hardness of total ionizing dose for the detector is good,and the displacement damage is the main reason for the degradation of detectors’ key parameters.Due to the difference in working principle,all kinds of devices show different degradation behavior and degradation mechanism in the space radiation.