Integrated Circuits and Embedded Systems

Figure/Table detail

Research on reliability characterization method for MOS devices under electromagnetic interference environment

ZHU Yaxing, ZHAO Dongyan, CHEN Yanning, LIU Fang, WU Bo, WANG Kai, YU Wen, WANG Baiqing, SONG Binbin, LIAN Yajun

Integrated Circuits and Embedded Systems, 2024, 24(8): 29-34. DOI: 10.20193/j.ices2097-4191.2024.0012

Fig. 1 Experiment data

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Fig. 2 Schematic diagram of Si-H bond breakage at Si/SiO₂ interface
Fig. 3 Flow chart for predicting the life of MOS devices under electromagnetic interference environment
Fig. 4 Simulation data of MOS device reliability model based on TCAD technique