Special Topic of Microprocessor Technology
YANG Yanan, PEI Bingxi, ZHANG Guangda, ZHAO Xia, ZHONG Zhiyong, HE Weifeng
This paper presents the design and implementation of a high-efficiency computing circuit chip based on the 22 nm FD-SOI process, covering a wide voltage range from 0.2 V to 0.8 V. The paper conducts a comparative analysis and optimization of energy efficiency across four levels: architectural design, cell library selection, low-power logic synthesis, and physical design. By implementing and simulating different computing architectures, the paper identifies the optimal architectural design with the best overall performance. Standard cell libraries with different channel lengths and threshold voltages are evaluated, and a mix of high-drive and low-leakage cells are used to balance performance and power consumption. The optimized energy efficiency is reduced to 102.64 fJ/Op, representing a 17.5% improvement over a single-type cell design. During the logic synthesis stage, the DesignWare-LP flow is applied, achieving a 6.7% improvement in energy efficiency through logic reorganization and low-power cell replacement. During the physical design phase, unit density is controlled to further reduce parasitic capacitance. We validated the optimized chip through tape-out verification, with test results showing: at a 0.24 V operating voltage, the energy efficiency of the adder and multiplier reached 1.55 fJ/Op and 14.1 fJ/Op, respectively, with latency below 100 ns, effectively addressing the shortcomings of existing solutions in terms of wide voltage adaptability or multi-dimensional energy efficiency optimization.